STB9NK70Z-1

new-10%

Manufacturer part number:STB9NK70Z-1

Manufacturer:STMicroelectronics

Description:STMICROELECTRONICS STB9NK70Z-1 Power MOSFET, N Channel, 7.5 A, 700 V, 1 ohm, 10 V, 3.75 V

Case Package:SOT-23

Datasheet:STB9NK70Z-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STB9N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	115W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	115W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	7.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	700V
Height	10.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant