STD17NF03L-1

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STD17NF03L-1

Manufacturer part number:STD17NF03L-1

Manufacturer:STMicroelectronics

Description:MOSFET, N CH, 30V, 17A, IPAK

Case Package:SOT-23

Datasheet:STD17NF03L-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD17
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 5V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	68A
Avalanche Energy Rating (Eas)	200 mJ
Max Junction Temperature (Tj)	175°C
Nominal Vgs	1.5 V
Height	8.4mm
Length	6.6mm
Width	2.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant