STD2N105K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD2N105K5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ K5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STD2N105
Configuration
Single
Power Dissipation-Max
60W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
115pF @ 100V
Current - Continuous Drain (Id) @ 25°C
1.5A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Drain to Source Voltage (Vdss)
1050V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
1.5A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STD2N105K5 Product Details
STD2N105K5 Description
STD2N105K5 is a 1050V N-channel MDmesh? K5 Power MOSFET. The very high voltage N-channel Power MOSFET STD2N105K5 is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor STD2N105K5 is in the TO-252-3 package with 60W power dissipation.