STD9NM50N-1

new-10%

Manufacturer part number:STD9NM50N-1

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 7.5A IPAK

Case Package:SOT-23

Datasheet:STD9NM50N-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	560m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 50V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.56Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	150 mJ
RoHS Status	ROHS3 Compliant