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STGF35HF60W

  • STGF35HF60W
  • STGF35HF60W

STGF35HF60W

STGF35HF60W

STMicroelectronics

STGF35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF35HF60W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.299997g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 40W
Base Part Number STGF35
Element Configuration Single
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 40W
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 225 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 19A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Gate Charge 140nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/175ns
Switching Energy 290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.786402 $0.786402
10 $0.741889 $7.41889
100 $0.699894 $69.9894
500 $0.660279 $330.1395
1000 $0.622904 $622.904
STGF35HF60W Product Details

STGF35HF60W Description


A new planar technology was used to create this ultrafast IGBT, which has a narrower switching energy variation (Eoff) against temperature. A subset of items created for high switching frequency operation are identified by the suffix "W." (over 100 kHz).



STGF35HF60W Features


  • Improved Eoff at elevated temperature

  • Minimal tail current

  • Low conduction losses



STGF35HF60W Applications


  • Welding

  • High frequency converters

  • Power factor correction


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