STGF4M65DF2 Description

This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The device is a member of the M series of IGBTs, which represent the performance and efficiency of inverter systems in situations where low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operation.

STGF4M65DF2 Features

• Short-circuit withstand time of 6 seconds

• IC = 4 A, VCE(sat) = 1.6 V (typ.

• The parameter distribution is tight.

• More secure paralleling

• Minimal thermal conductivity

• Antiparallel diode that recovers softly and quickly

STGF4M65DF2 Applications

• motor management

• UPS

• PFC