STGP19NC60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGP19NC60S Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
FREE WHEELING DIODE
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
130W
Base Part Number
STGP19
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
23.5 ns
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 12A
Turn Off Time-Nom (toff)
535 ns
Gate Charge
54.5nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
17.5ns/175ns
Switching Energy
135μJ (on), 815μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.38000
$4.38
50
$3.72100
$186.05
100
$3.22480
$322.48
STGP19NC60S Product Details
STGP19NC60S Description
STGP19NC60S transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP19NC60S MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.