STGWS38IH130D

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Manufacturer part number:STGWS38IH130D

Manufacturer:STMicroelectronics

Description:STGWS38IH130D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWS38IH130D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	180W
Base Part Number	STGW38
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	180W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.3kV
Max Collector Current	55A
Collector Emitter Breakdown Voltage	1.3kV
Voltage - Collector Emitter Breakdown (Max)	1300V
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Turn Off Time-Nom (toff)	740 ns
Gate Charge	127nC
Current - Collector Pulsed (Icm)	125A
Td (on/off) @ 25°C	-/284ns
Switching Energy	3.4mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant