STL180N6F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STL180N6F7 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ F7
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
4.8W Ta 166W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.4m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4825pF @ 25V
Current - Continuous Drain (Id) @ 25°C
32A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs
79.5nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:2952 items
STL180N6F7 Product Details
STL180N6F7 Description
STL180N6F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a Drain to Source Voltage (Vdss) of 60V. With an improved trench gate structure and STripFETTM F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.
STL180N6F7 Features
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
STL180N6F7 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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