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STL180N6F7

  • STL180N6F7
  • STL180N6F7

STL180N6F7

STL180N6F7

STMicroelectronics

STL180N6F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STL180N6F7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ F7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 4.8W Ta 166W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4825pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 79.5nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
STL180N6F7 Product Details

STL180N6F7 Description


STL180N6F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a Drain to Source Voltage (Vdss) of 60V. With an improved trench gate structure and STripFETTM F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.



STL180N6F7 Features


  • Among the lowest RDS(on) on the market

  • Excellent FoM (figure of merit)

  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness



STL180N6F7 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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