STLD200N4F6AG

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STLD200N4F6AG

Manufacturer part number:STLD200N4F6AG

Manufacturer:STMicroelectronics

Description:STLD200N4F6AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STLD200N4F6AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, STripFET™ F6
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STLD20
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	158W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	10700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	172nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	6.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.002Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant