STN3N45K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STN3N45K3 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
SuperMESH3™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
3.8Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN3N
Pin Count
4
Number of Elements
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 25V
Current - Continuous Drain (Id) @ 25°C
600mA Tc
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
600mA
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.6A
Drain to Source Breakdown Voltage
450V
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.882000
$0.882
10
$0.832075
$8.32075
100
$0.784977
$78.4977
500
$0.740544
$370.272
1000
$0.698627
$698.627
STN3N45K3 Product Details
STN3N45K3 MOSFET, paired with a brand new, improved vertical design. It has an extremely low on-resistance and superior dynamic performance and high ability to avalanche, making it ideal to be used in the toughest tasks. Its higher gate charge and lower power dissipation ensure that it meets today's high-efficiency requirements.
Low on-resistance Lower power dissipation Superior dynamic performance High avalanche capability High-efficiency applications