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STN3N45K3

STN3N45K3

STN3N45K3

STMicroelectronics

STN3N45K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STN3N45K3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 3.8Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN3N
Pin Count 4
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 600mA
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.6A
Drain to Source Breakdown Voltage 450V
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.882000 $0.882
10 $0.832075 $8.32075
100 $0.784977 $78.4977
500 $0.740544 $370.272
1000 $0.698627 $698.627
STN3N45K3 Product Details
STN3N45K3 MOSFET, paired with a brand new, improved vertical design. It has an extremely low on-resistance and superior dynamic performance and high ability to avalanche, making it ideal to be used in the toughest tasks. Its higher gate charge and lower power dissipation ensure that it meets today's high-efficiency requirements.


Low on-resistance
Lower power dissipation
Superior dynamic performance
High avalanche capability
High-efficiency applications

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