STP30NM30N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP30NM30N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Resistance
90mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP30N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
65 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
300V
Avalanche Energy Rating (Eas)
900 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2379 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STP30NM30N Product Details
STP30NM30N Description
STP30NM30N is a 300v Ultra low gate charge MDmesh? II Power MOSFET. This 300V Power MOSFET STP30NM30N with a new advanced layout brings all the unique advantages of MDmesh? technology to medium voltages. The device exhibits the worldwide lowest gate charge for any given on-resistance. Its use is therefore ideal as a primary side switch for DC-DC converters as well as for switch mode power supply allowing higher efficiencies and system miniaturization.
STP30NM30N Features
Worldwide lowest gate charge
High dv/dt avalanche capabilities
Low input capacitance
Low gate resistance
STP30NM30N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
