STP5N120

new-10%

Manufacturer part number:STP5N120

Manufacturer:STMicroelectronics

Description:STP5N120 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP5N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.5Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP5N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.7A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	4.7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4.4A
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	400 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free