STP8N65M5

new-10%

Manufacturer part number:STP8N65M5

Manufacturer:STMicroelectronics

Description:STP8N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP8N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	600mOhm
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP8N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	7A
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	28A
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free