STT13005D datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STT13005D Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
45W
Base Part Number
STT13
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
45W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 500mA 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 400mA, 1.6A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.089520
$0.08952
500
$0.065824
$32.912
1000
$0.054853
$54.853
2000
$0.050324
$100.648
5000
$0.047032
$235.16
10000
$0.043750
$437.5
15000
$0.042312
$634.68
50000
$0.041604
$2080.2
STT13005D Product Details
STT13005D Overview
This device has a DC current gain of 10 @ 500mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 400mA, 1.6A.The emitter base voltage can be kept at 9V for high efficiency.A maximum collector current of 2A volts can be achieved.
STT13005D Features
the DC current gain for this device is 10 @ 500mA 5V the vce saturation(Max) is 1.5V @ 400mA, 1.6A the emitter base voltage is kept at 9V
STT13005D Applications
There are a lot of STMicroelectronics STT13005D applications of single BJT transistors.