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STU5N95K3

STU5N95K3

STU5N95K3

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 3.5 Ω @ 2A, 10V ±30V 460pF @ 25V 19nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

SOT-23

STU5N95K3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number STU5N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 950V
Height 6.9mm
Length 6.6mm
Width 2.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.06000 $3.06
75 $2.50200 $187.65
150 $2.26787 $340.1805
525 $1.79987 $944.93175
STU5N95K3 Product Details

STU5N95K3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 950V, and this device has a drainage-to-source breakdown voltage of 950VV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STU5N95K3 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V


STU5N95K3 Applications


There are a lot of STMicroelectronics
STU5N95K3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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