STW25N95K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW25N95K3 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH3™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Resistance
320mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW25N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
400W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
400W
Turn On Delay Time
39 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
360m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
3680pF @ 100V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
105nC @ 10V
Rise Time
29ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
59 ns
Turn-Off Delay Time
97 ns
Continuous Drain Current (ID)
22A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
950V
Pulsed Drain Current-Max (IDM)
88A
Avalanche Energy Rating (Eas)
450 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STW25N95K3 Product Details
STW25N95K3 Description
This STW25N95K3 MOSFET is the product of STMicroelectronics' SuperMESHTM technology being improved, as well as a new optimized vertical structure. This device has a very low on-resistance, excellent dynamic performance, and a high avalanche capability, making it ideal for the most demanding applications.