STW27NM60ND

new-10%

Manufacturer part number:STW27NM60ND

Manufacturer:STMicroelectronics

Description:STW27NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW27NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	Automotive, AEC-Q101, FDmesh™ II
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Base Part Number	STW27N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	160W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Turn On Delay Time	60 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	21A Tc
Rise Time	30ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	25V
Pulsed Drain Current-Max (IDM)	84A
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant