STY130NF20D

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Manufacturer part number:STY130NF20D

Manufacturer:STMicroelectronics

Description:STY130NF20D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STY130NF20D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	12MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STY130
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Turn On Delay Time	232 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 65A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	338nC @ 10V
Rise Time	218ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	250 ns
Turn-Off Delay Time	283 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	520A
Avalanche Energy Rating (Eas)	800 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free