STY130NF20D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STY130NF20D Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
247
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
12MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STY130
Pin Count
3
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Power Dissipation-Max
450W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
450W
Turn On Delay Time
232 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 65A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
130A Tc
Gate Charge (Qg) (Max) @ Vgs
338nC @ 10V
Rise Time
218ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
250 ns
Turn-Off Delay Time
283 ns
Continuous Drain Current (ID)
130A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
520A
Avalanche Energy Rating (Eas)
800 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STY130NF20D Product Details
STY130NF20D Description
The STY130NF20D Power MOSFET is made utilizing STMicroelectronics' proprietary STripFETTM technology, which is specifically created to reduce gate charge and input capacitance. Because of the intrinsic fast body diode, the device has incredibly quick switching performance, making it perfect for hard switching topologies.