BRIDGE RECTIFIER DIODE SILICON NOT SPECIFIED DUAL Tape and Reel
SOT-23
DBLS157G-T RDG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
YES
Diode Element Material
SILICON
Number of Terminals
4
ECCN (US)
EAR99
HTS
8541.10.00.80
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
1000
Peak Average Forward Current (A)
1.5
Peak RMS Reverse Voltage (V)
700
Peak Non-Repetitive Forward Surge Current (A)
50
Peak Forward Voltage (V)
1.1
Peak Reverse Current (uA)
2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
AEC Qualified
No
Supplier Package
DBLS
Military
No
Mounting
Surface Mount
Package Height
2.6(Max)
Package Length
8.51(Max)
Package Width
6.5(Max)
PCB changed
4
Package Shape
RECTANGULAR
Manufacturer
Taiwan Semiconductor
Packaging
Tape and Reel
JESD-609 Code
e3
Part Status
Active
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
UL RECOGNIZED
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
4
Configuration
Single
Diode Type
BRIDGE RECTIFIER DIODE
Output Current-Max
1.5 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
1000 V
Non-rep Pk Forward Current-Max
50 A
Breakdown Voltage-Min
1000 V
RoHS Status
Yes with exemptions
DBLS157G-T RDG Product Details
DBLS157G-T RDG Overview
The peak forward voltage on the datasheets is 1.1.This device can handle reverse voltages within the range of 700 with a peak RMS value of 700 .The device may occasionally operate at the lowest breakdown voltage possible, which is 1000 V.Using this device, it is possible to read a maximum output current voltage of 1.5 A.
DBLS157G-T RDG Features
the forward peak voltage is 1.1 the peak RMS reverse voltage range of 700 at its lowest breakdown voltage of 1000 V a maximum output current voltage of 1.5 A
DBLS157G-T RDG Applications
There are a lot of Taiwan Semiconductor DBLS157G-T RDG applications of RF diodes.