RECTIFIER DIODE SILICON NOT SPECIFIED DUAL Tape and Reel
SOT-23
ES1GHM2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
Production (Last Updated: 2 years ago)
Surface Mount
YES
Diode Element Material
SILICON
Number of Terminals
2
ECCN (US)
EAR99
HTS
8541.10.00.70
Maximum DC Reverse Voltage (V)
400
Peak Reverse Repetitive Voltage (V)
400
Maximum Continuous Forward Current (A)
1
Peak Non-Repetitive Surge Current (A)
30
Peak Forward Voltage (V)
1.3
Peak Reverse Current (uA)
5
Peak Reverse Recovery Time (ns)
35
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
AEC Qualified Number
AEC-Q101
Standard Package Name
DO-214-AC
Supplier Package
SMA
Military
No
Mounting
Surface Mount
Package Height
2.3(Max)
Package Length
4.6(Max)
Package Width
2.83(Max)
PCB changed
2
Lead Shape
J-Lead
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Package Shape
RECTANGULAR
Manufacturer
Taiwan Semiconductor
Packaging
Tape and Reel
JESD-609 Code
e3
Part Status
Obsolete
ECCN Code
EAR99
Type
Switching Diode
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Pin Count
2
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-C2
Number of Elements
1
Configuration
Single
Diode Type
RECTIFIER DIODE
Output Current-Max
1 A
Rep Pk Reverse Voltage-Max
400 V
JEDEC-95 Code
DO-214AC
Reverse Recovery Time-Max
0.035 µs
RoHS Status
Yes with exemptions
ES1GHM2 Product Details
ES1GHM2 Overview
According to the datasheets, the peak forward voltage is 1.3.The maximum continuous forward current that this device consumes at any given time is about 1.A DC reverse voltage less than 400 must be used for operation.Diode can read a maximum output current voltage of 1 A using this device.
ES1GHM2 Features
the forward peak voltage is 1.3 a maximum output current voltage of 1 A
ES1GHM2 Applications
There are a lot of Taiwan Semiconductor ES1GHM2 applications of RF diodes.