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ES2G R4

ES2G R4

ES2G R4

Taiwan Semiconductor

RECTIFIER DIODE SILICON 260 DUAL Tape and Reel

SOT-23

ES2G R4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 400
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 2
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 1.3
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 35
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name DO-214-AA
Supplier Package SMB
Military No
Mounting Surface Mount
Package Height 2.41(Max)
Package Length 4.75(Max)
Package Width 3.73(Max)
PCB changed 2
Lead Shape Inward L-Lead
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor Manufacturing Company Limited
PackagingTape and Reel
JESD-609 Code e3
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.80
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count2
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 2 A
Application EFFICIENCY
Number of Phases 1
Rep Pk Reverse Voltage-Max 400 V
JEDEC-95 Code DO-214AA
Non-rep Pk Forward Current-Max 50 A
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.035 µs
RoHS StatusYes with exemptions
In-Stock:4553 items

ES2G R4 Product Details

ES2G R4 Overview


In accordance with the datasheets, the forward peak voltage is 1.3.Approximately 2 is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 400.This device is capable of reading a maximum output current voltage of 2 A.

ES2G R4 Features


the forward peak voltage is 1.3
a maximum output current voltage of 2 A


ES2G R4 Applications


There are a lot of Taiwan Semiconductor
ES2G R4 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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