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ESH1B R3

ESH1B R3

ESH1B R3

Taiwan Semiconductor

RECTIFIER DIODE SILICON DUAL Tape and Reel

SOT-23

ESH1B R3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 0.9
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 15
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
AEC Qualified No
Standard Package Name DO-214-AC
Supplier Package SMA
Military No
Mounting Surface Mount
Package Height 2.3(Max)
Package Length 4.6(Max)
Package Width 2.83(Max)
PCB changed 2
Lead Shape Inward L-Lead
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTape and Reel
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal FormC BEND
Reach Compliance Code compliant
Pin Count2
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 100 V
JEDEC-95 Code DO-214AC
Non-rep Pk Forward Current-Max 30 A
Reverse Recovery Time-Max 0.015 µs
RoHS StatusYes with exemptions
In-Stock:3326 items

ESH1B R3 Product Details

ESH1B R3 Overview


The datasheets state that the peak forward voltage is 0.9.A continuous forward current of about 1 can be consumed by this device at any given time.When used with this device, the maximum output current voltage can be read to be 1 A.

ESH1B R3 Features


the forward peak voltage is 0.9
a maximum output current voltage of 1 A


ESH1B R3 Applications


There are a lot of Taiwan Semiconductor
ESH1B R3 applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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