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ESH1B R3

ESH1B R3

ESH1B R3

Taiwan Semiconductor

RECTIFIER DIODE SILICON DUAL Tape and Reel

SOT-23

ESH1B R3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 0.9
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 15
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
AEC Qualified No
Standard Package Name DO-214-AC
Supplier Package SMA
Military No
Mounting Surface Mount
Package Height 2.3(Max)
Package Length 4.6(Max)
Package Width 2.83(Max)
PCB changed 2
Lead Shape Inward L-Lead
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
Packaging Tape and Reel
Part Status Obsolete
ECCN Code EAR99
Type Switching Diode
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Reach Compliance Code compliant
Pin Count 2
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 100 V
JEDEC-95 Code DO-214AC
Non-rep Pk Forward Current-Max 30 A
Reverse Recovery Time-Max 0.015 µs
RoHS Status Yes with exemptions
ESH1B R3 Product Details

ESH1B R3 Overview


The datasheets state that the peak forward voltage is 0.9.A continuous forward current of about 1 can be consumed by this device at any given time.When used with this device, the maximum output current voltage can be read to be 1 A.

ESH1B R3 Features


the forward peak voltage is 0.9
a maximum output current voltage of 1 A


ESH1B R3 Applications


There are a lot of Taiwan Semiconductor
ESH1B R3 applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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