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GBPC2501 T0

GBPC2501 T0

GBPC2501 T0

Taiwan Semiconductor

BRIDGE RECTIFIER DIODE SILICON NOT SPECIFIED UPPER

SOT-23

GBPC2501 T0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 100
Peak Average Forward Current (A) 25
Peak RMS Reverse Voltage (V) 70
Peak Non-Repetitive Forward Surge Current (A) 300
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
AEC Qualified No
Standard Package Name Module
Supplier Package Case GBPC
Military No
Mounting Screw
Package Height 11.23(Max)
Package Length 29(Max)
Package Width 29(Max)
PCB changed 4
Package Shape SQUARE
Manufacturer Taiwan Semiconductor
JESD-609 Code e3
Part StatusActive
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureUL RECOGNIZED
HTS Code8541.10.00.80
Terminal Position UPPER
Terminal FormSOLDER LUG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count4
JESD-30 Code S-PUFM-D4
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 25 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 100 V
Non-rep Pk Forward Current-Max 300 A
Breakdown Voltage-Min 100 V
RoHS StatusYes with exemptions
In-Stock:4914 items

GBPC2501 T0 Product Details

GBPC2501 T0 Overview


In accordance with the datasheets, the forward peak voltage is [email protected] effective reverse voltage range of 70 is provided by this device.This device may operate at its lowest breakdown voltage of 100 V on occasion.This device is capable of reading a maximum output current voltage of 25 A.

GBPC2501 T0 Features


the forward peak voltage is [email protected]
the peak RMS reverse voltage range of 70
at its lowest breakdown voltage of 100 V
a maximum output current voltage of 25 A


GBPC2501 T0 Applications


There are a lot of Taiwan Semiconductor
GBPC2501 T0 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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