BRIDGE RECTIFIER DIODE SILICON NOT SPECIFIED UPPER
SOT-23
GBPC2506M T0 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Diode Element Material
SILICON
Number of Terminals
4
ECCN (US)
EAR99
HTS
8541.10.00.80
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
600
Peak Average Forward Current (A)
25
Peak RMS Reverse Voltage (V)
420
Peak Non-Repetitive Forward Surge Current (A)
300
Peak Forward Voltage (V)
[email protected]
Peak Reverse Current (uA)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Package
Case GBPC-M
Military
No
Mounting
Screw
Package Height
11.23(Max)
Package Length
29(Max)
Package Width
29(Max)
PCB changed
4
Package Shape
SQUARE
Manufacturer
Taiwan Semiconductor
JESD-609 Code
e3
Part Status
Active
Terminal Finish
MATTE TIN
Additional Feature
UL RECOGNIZED
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
S-PUFM-D4
Number of Elements
4
Configuration
Single
Diode Type
BRIDGE RECTIFIER DIODE
Output Current-Max
25 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
600 V
Non-rep Pk Forward Current-Max
300 A
Breakdown Voltage-Min
600 V
RoHS Status
Yes with exemptions
GBPC2506M T0 Product Details
GBPC2506M T0 Overview
The peak forward voltage is [email protected] according to the datasheets.This device can operate efficiently with a reverse voltage range of 420.The breakdown voltage of this device may occasionally be as low as 600 V.This device can read a maximum output current voltage of 25 A.
GBPC2506M T0 Features
the forward peak voltage is [email protected] the peak RMS reverse voltage range of 420 at its lowest breakdown voltage of 600 V a maximum output current voltage of 25 A
GBPC2506M T0 Applications
There are a lot of Taiwan Semiconductor GBPC2506M T0 applications of RF diodes.