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HDBL106GHC1G

HDBL106GHC1G

HDBL106GHC1G

Taiwan Semiconductor

BRIDGE RECTIFIER DIODE SILICON DUAL Tube

SOT-23

HDBL106GHC1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 800
Peak Average Forward Current (A) 1
Peak RMS Reverse Voltage (V) 560
Peak Non-Repetitive Forward Surge Current (A) 50
Peak Forward Voltage (V) 1.7
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 75
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package DBL
Military No
Mounting Through Hole
Package Height 2.6(Max)
Package Length 8.51(Max)
Package Width 6.5(Max)
PCB changed 4
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTube
Part StatusActive
ECCN Code EAR99
Additional FeatureUL RECOGNIZED
Terminal Position DUAL
Terminal FormTHROUGH-HOLE
Reach Compliance Code compliant
Pin Count4
Reference Standard AEC-Q101
JESD-30 Code R-PDIP-T4
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 1 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 800 V
Non-rep Pk Forward Current-Max 50 A
Breakdown Voltage-Min 800 V
RoHS StatusYes with exemptions
In-Stock:2213 items

HDBL106GHC1G Product Details

HDBL106GHC1G Overview


In the datasheets, 1.7 is stated as the peak forward voltage.In order to operate efficiently, this device should have a peak RMS reverse voltage range of 560.There may be times when this device runs at its lowest possible breakdown voltage, which is 800 V.This device can read current voltages up to 1 A.

HDBL106GHC1G Features


the forward peak voltage is 1.7
the peak RMS reverse voltage range of 560
at its lowest breakdown voltage of 800 V
a maximum output current voltage of 1 A


HDBL106GHC1G Applications


There are a lot of Taiwan Semiconductor
HDBL106GHC1G applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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