HS3GBHR4G

new-10%

Manufacturer part number:HS3GBHR4G

Manufacturer:Taiwan Semiconductor

Description:RECTIFIER DIODE SILICON NOT SPECIFIED DUAL

Case Package:SOT-23

Datasheet:HS3GBHR4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Diode Element Material	SILICON
Number of Terminals	2
ECCN (US)	EAR99
Maximum DC Reverse Voltage (V)	400
Peak Reverse Repetitive Voltage (V)	400
Maximum Continuous Forward Current (A)	3
Peak Non-Repetitive Surge Current (A)	100
Peak Forward Voltage (V)	1.3
Peak Reverse Current (uA)	10
Peak Reverse Recovery Time (ns)	50
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Supplier Temperature Grade	Automotive
AEC Qualified Number	AEC-Q101
Supplier Package	SMB
Military	No
Mounting	Surface Mount
Package Height	2.41(Max)
Package Length	4.75(Max)
Package Width	3.73(Max)
PCB changed	2
Lead Shape	Inward L-Lead
Manufacturer	Taiwan Semiconductor
Package Shape	RECTANGULAR
JESD-609 Code	e3
Part Status	Obsolete
ECCN Code	EAR99
Type	Switching Diode
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW POWER LOSS
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	2
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-C2
Number of Elements	1
Configuration	Single
Diode Type	RECTIFIER DIODE
Output Current-Max	3 A
Application	EFFICIENCY
Number of Phases	1
Rep Pk Reverse Voltage-Max	400 V
JEDEC-95 Code	DO-214AA
Non-rep Pk Forward Current-Max	100 A
Reverse Current-Max	10 µA
Reverse Recovery Time-Max	0.05 µs
RoHS Status	Yes with exemptions