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HS3GHV6G

HS3GHV6G

HS3GHV6G

Taiwan Semiconductor

RECTIFIER DIODE SILICON DUAL Tape and Reel

SOT-23

HS3GHV6G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 400
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 3
Peak Non-Repetitive Surge Current (A) 150
Peak Forward Voltage (V) 1.3
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package SMC
Military No
Mounting Surface Mount
Package Height 2.42(Max)
Package Length 7.11(Max)
Package Width 6.22(Max)
PCB changed 2
Lead Shape Inward L-Lead
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTape and Reel
JESD-609 Code e3
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn)
Additional FeatureFREE WHEEELING DIODE
HTS Code8541.10.00.80
Terminal Position DUAL
Terminal FormC BEND
Reach Compliance Code compliant
Pin Count2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 3 A
Application EFFICIENCY
Number of Phases 1
Rep Pk Reverse Voltage-Max 400 V
JEDEC-95 Code DO-214AB
Non-rep Pk Forward Current-Max 150 A
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.05 µs
Reverse Test Voltage 400 V
RoHS StatusYes with exemptions
In-Stock:1186 items

HS3GHV6G Product Details

HS3GHV6G Overview


The peak forward voltage is 1.3 in the datasheets.A continuous forward current of about 3 is consumed by this device at all times.DC reverse voltage less than 400 is required.For a conversion result to be valid, it must be within 400 V.By using this device, it's possible to read a maximum output current voltage of 3 A.

HS3GHV6G Features


the forward peak voltage is 1.3
a maximum output current voltage of 3 A


HS3GHV6G Applications


There are a lot of Taiwan Semiconductor
HS3GHV6G applications of RF diodes.


  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators
  • Phase detection

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