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YBS3006G RAG

YBS3006G RAG

YBS3006G RAG

Taiwan Semiconductor

BRIDGE RECTIFIER DIODE SILICON NOT SPECIFIED DUAL Tape and Reel

SOT-23

YBS3006G RAG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 4
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 800
Peak Average Forward Current (A) 3
Peak RMS Reverse Voltage (V) 560
Peak Non-Repetitive Forward Surge Current (A) 220
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Military No
Mounting Surface Mount
Package Height 1.5(Max)
Package Length 6.7(Max)
Package Width 7.4(Max)
PCB changed 4
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
PackagingTape and Reel
Part StatusActive
Additional FeatureUL RECOGNIZED
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count4
JESD-30 Code R-PDSO-F4
Number of Elements 4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 3 A
Number of Phases 1
Rep Pk Reverse Voltage-Max 800 V
Non-rep Pk Forward Current-Max 88 A
RoHS StatusYes with exemptions
In-Stock:2415 items

YBS3006G RAG Product Details

YBS3006G RAG Overview


In the datasheets, 1.1 is stated as the peak forward voltage.In order to operate efficiently, this device should have a peak RMS reverse voltage range of 560.This device can read current voltages up to 3 A.

YBS3006G RAG Features


the forward peak voltage is 1.1
the peak RMS reverse voltage range of 560
a maximum output current voltage of 3 A


YBS3006G RAG Applications


There are a lot of Taiwan Semiconductor
YBS3006G RAG applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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