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1N4757A R1G

  • 1N4757A R1G
  • 1N4757A R1G

1N4757A R1G

1N4757A R1G

Taiwan Semiconductor Corporation

95Ohms ±5% 5μA @ 38.8V -55°C~150°C TJ DO-204AL, DO-41, Axial

SOT-23

1N4757A R1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 5μA @ 38.8V
Power - Max 1W
Impedance-Max 95Ohms
Voltage - Zener (Nom) (Vz) 51V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1N4757A R1G Product Details

1N4757A R1G Overview


The reverse leakage current needed to power this electric device is 5μA @ 38.8V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 51V.

1N4757A R1G Features


reverse leakage current of 5μA @ 38.8V
5μA @ 38.8V is the maximum voltage (Tol)


1N4757A R1G Applications


There are a lot of Taiwan Semiconductor Corporation
1N4757A R1G applications of zener single diodes.


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