1N5406G A0G

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Manufacturer part number:1N5406G A0G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 600V 3A DO201AD

Case Package:SOT-23

Datasheet:1N5406G A0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	DO-201AD, Axial
Surface Mount	NO
Diode Element Material	SILICON
Packaging	Tape & Box (TB)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY, LOW POWER LOSS
HTS Code	8541.10.00.80
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	O-PALF-W2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1V @ 3A
Case Connection	ISOLATED
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	3A
Application	EFFICIENCY
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	3A
Number of Phases	1
Rep Pk Reverse Voltage-Max	600V
Capacitance @ Vr, F	25pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	125A
Reverse Current-Max	5μA
RoHS Status	ROHS3 Compliant