1N5408GHB0G

new-10%

Manufacturer part number:1N5408GHB0G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 3A DO201AD

Case Package:SOT-23

Datasheet:1N5408GHB0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	DO-201AD, Axial
Supplier Device Package	DO-201AD
Packaging	Bulk
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1V @ 3A
Operating Temperature - Junction	-55°C~150°C
Current - Average Rectified (Io)	3A
Capacitance @ Vr, F	25pF @ 4V 1MHz
RoHS Status	ROHS3 Compliant