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BC847C RFG

BC847C RFG

BC847C RFG

Taiwan Semiconductor Corporation

BC847C RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC847C RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03542 $0.10626
BC847C RFG Product Details

BC847C RFG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.When VCE saturation is 500mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).SOT-23 is the supplier device package for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC847C RFG Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the supplier device package of SOT-23

BC847C RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC847C RFG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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