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BC847C RFG

BC847C RFG

BC847C RFG

Taiwan Semiconductor Corporation

BC847C RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC847C RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC847C RFG Product Details

BC847C RFG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.When VCE saturation is 500mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).SOT-23 is the supplier device package for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC847C RFG Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 500mV @ 5mA, 100mA
the supplier device package of SOT-23

BC847C RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC847C RFG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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