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BZD17C11P R3G

  • BZD17C11P R3G
  • BZD17C11P R3G

BZD17C11P R3G

BZD17C11P R3G

Taiwan Semiconductor Corporation

7Ohms ±5.45% 4μA @ 8.2V -55°C~175°C TJ DO-219AB

SOT-23

BZD17C11P R3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5.45%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 4μA @ 8.2V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Impedance-Max 7Ohms
Voltage - Zener (Nom) (Vz) 11V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,600 $0.09945 $0.29835
BZD17C11P R3G Product Details

BZD17C11P R3G Overview


The reverse leakage current for this electrical device should be 4μA @ 8.2V.While operating, the maximum voltage - Zener (Nom) is reduced to 11VV.For its operation, maximum voltage - Forward (Vf) 1.2V @ 200mA is provided.

BZD17C11P R3G Features


reverse leakage current of 4μA @ 8.2V
4μA @ 8.2V is the maximum voltage (Tol)


BZD17C11P R3G Applications


There are a lot of Taiwan Semiconductor Corporation
BZD17C11P R3G applications of zener single diodes.


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