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BZD17C12P RVG

  • BZD17C12P RVG
  • BZD17C12P RVG

BZD17C12P RVG

BZD17C12P RVG

Taiwan Semiconductor Corporation

7Ohms ±5.41% 3μA @ 9.1V -55°C~175°C TJ DO-219AB

SOT-23

BZD17C12P RVG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5.41%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 3μA @ 9.1V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Impedance-Max 7Ohms
Voltage - Zener (Nom) (Vz) 12V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.10000 $0.1
500 $0.099 $49.5
1000 $0.098 $98
1500 $0.097 $145.5
2000 $0.096 $192
2500 $0.095 $237.5
BZD17C12P RVG Product Details

BZD17C12P RVG Overview


In order to supply this electrical device, a reverse leakage current of 3μA @ 9.1V is required.Zener (Nom) voltage is reduced to 12V during operation.1.2V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZD17C12P RVG Features


reverse leakage current of 3μA @ 9.1V
3μA @ 9.1V is the maximum voltage (Tol)


BZD17C12P RVG Applications


There are a lot of Taiwan Semiconductor Corporation
BZD17C12P RVG applications of zener single diodes.


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