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BZD17C43P RTG

  • BZD17C43P RTG
  • BZD17C43P RTG

BZD17C43P RTG

BZD17C43P RTG

Taiwan Semiconductor Corporation

45Ohms ±6.97% 1μA @ 33V -55°C~175°C TJ DO-219AB

SOT-23

BZD17C43P RTG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±6.97%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 1μA @ 33V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Impedance-Max 45Ohms
Voltage - Zener (Nom) (Vz) 43V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZD17C43P RTG Product Details

BZD17C43P RTG Overview


An electrical device like this requires a reverse leakage current of 1μA @ 33V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 43V.For operation, diode reaches 1.2V @ 200mA at the maximum voltage - Forward (Vf).

BZD17C43P RTG Features


reverse leakage current of 1μA @ 33V
1μA @ 33V is the maximum voltage (Tol)


BZD17C43P RTG Applications


There are a lot of Taiwan Semiconductor Corporation
BZD17C43P RTG applications of zener single diodes.


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