BZD17C51P R3G

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Manufacturer part number:BZD17C51P R3G

Manufacturer:Taiwan Semiconductor Corporation

Description:60Ohms ±5.88% 1μA @ 39V -55°C~175°C TJ DO-219AB

Case Package:SOT-23

Datasheet:BZD17C51P R3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	DO-219AB
Supplier Device Package	Sub SMA
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±5.88%
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Current - Reverse Leakage @ Vr	1μA @ 39V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 200mA
Power - Max	800mW
Impedance-Max	60Ohms
Voltage - Zener (Nom) (Vz)	51V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,600	$0.09945	$0.29835

BZD17C51P R3G Overview

An electrical device like this requires a reverse leakage current of 1μA @ 39V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 51V.For operation, diode reaches 1.2V @ 200mA at the maximum voltage - Forward (Vf).