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BZD27C10P RTG

  • BZD27C10P RTG
  • BZD27C10P RTG

BZD27C10P RTG

BZD27C10P RTG

Taiwan Semiconductor Corporation

4Ohms ±6% 7μA @ 7.5V -55°C~175°C TJ DO-219AB

SOT-23

BZD27C10P RTG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±6%
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 7μA @ 7.5V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 1W
Impedance-Max 4Ohms
Voltage - Zener (Nom) (Vz) 10V
RoHS Status ROHS3 Compliant
BZD27C10P RTG Product Details

BZD27C10P RTG Overview


The reverse leakage current for this electrical device should be 7μA @ 7.5V.While operating, the maximum voltage - Zener (Nom) is reduced to 10VV.For its operation, maximum voltage - Forward (Vf) 1.2V @ 200mA is provided.

BZD27C10P RTG Features


reverse leakage current of 7μA @ 7.5V
7μA @ 7.5V is the maximum voltage (Tol)


BZD27C10P RTG Applications


There are a lot of Taiwan Semiconductor Corporation
BZD27C10P RTG applications of zener single diodes.


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