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BZD27C12P RTG

  • BZD27C12P RTG
  • BZD27C12P RTG

BZD27C12P RTG

BZD27C12P RTG

Taiwan Semiconductor Corporation

7Ohms ±5.39% 3μA @ 9.1V -55°C~175°C TJ DO-219AB

SOT-23

BZD27C12P RTG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5.39%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 3μA @ 9.1V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 1W
Impedance-Max 7Ohms
Voltage - Zener (Nom) (Vz) 12.05V
RoHS Status ROHS3 Compliant
BZD27C12P RTG Product Details

BZD27C12P RTG Overview


A reverse leakage current of 3μA @ 9.1V is required to supply this electrical device.Zener (Nom)'s maximum voltage is reduced to zero during operation.1.2V @ 200mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZD27C12P RTG Features


reverse leakage current of 3μA @ 9.1V
3μA @ 9.1V is the maximum voltage (Tol)


BZD27C12P RTG Applications


There are a lot of Taiwan Semiconductor Corporation
BZD27C12P RTG applications of zener single diodes.


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