BZS55C30 RXG

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Manufacturer part number:BZS55C30 RXG

Manufacturer:Taiwan Semiconductor Corporation

Description:ZENER DIODE 80Ohm ±5% 100nA @ 22V -55°C~150°C TJ 1206 (3216 Metric)

Case Package:SOT-23

Datasheet:BZS55C30 RXG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	1206 (3216 Metric)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±5%
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.10.00.50
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	100nA @ 22V
Voltage - Forward (Vf) (Max) @ If	1.5V @ 10mA
Power - Max	500mW
Impedance-Max	80Ohm
Voltage - Zener (Nom) (Vz)	30V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZS55C30 RXG Overview

An electrical device like this requires a reverse leakage current of 100nA @ 22V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 30V.For operation, diode reaches 1.5V @ 10mA at the maximum voltage - Forward (Vf).