BZT52B33-G RHG

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Manufacturer part number:BZT52B33-G RHG

Manufacturer:Taiwan Semiconductor Corporation

Description:ZENER DIODE 80Ohm ±2% 100nA @ 23.1V -55°C~150°C TJ SOD-123

Case Package:SOT-23

Datasheet:BZT52B33-G RHG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	SOD-123
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±2%
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.10.00.50
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	100nA @ 23.1V
Voltage - Forward (Vf) (Max) @ If	900mV @ 10mA
Power - Max	410mW
Impedance-Max	80Ohm
Voltage - Zener (Nom) (Vz)	33V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZT52B33-G RHG Overview

An electrical device like this requires a reverse leakage current of 100nA @ 23.1V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 33V.For operation, diode reaches 900mV @ 10mA at the maximum voltage - Forward (Vf).