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BZT52B3V0 RHG

BZT52B3V0 RHG

BZT52B3V0 RHG

Taiwan Semiconductor Corporation

ZENER DIODE 100Ohm ±2% 9μA @ 1V 150°C TJ SOD-123F

SOT-23

BZT52B3V0 RHG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123F
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Tolerance ±2%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 9μA @ 1V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 100Ohm
Voltage - Zener (Nom) (Vz) 3V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04794 $0.14382
BZT52B3V0 RHG Product Details

BZT52B3V0 RHG Overview


The reverse leakage current needed to power this electric device is 9μA @ 1V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 3V.For its operation, the maximum voltage - Forward (Vf) 1V @ 10mA is supplied.

BZT52B3V0 RHG Features


reverse leakage current of 9μA @ 1V
9μA @ 1V is the maximum voltage (Tol)


BZT52B3V0 RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52B3V0 RHG applications of zener single diodes.


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