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BZT52B3V9-G RHG

  • BZT52B3V9-G RHG
  • BZT52B3V9-G RHG

BZT52B3V9-G RHG

BZT52B3V9-G RHG

Taiwan Semiconductor Corporation

90Ohms ±2% 3μA @ 1V -55°C~150°C TJ SOD-123

SOT-23

BZT52B3V9-G RHG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Tolerance ±2%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 3μA @ 1V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 410mW
Impedance-Max 90Ohms
Voltage - Zener (Nom) (Vz) 3.9V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZT52B3V9-G RHG Product Details

BZT52B3V9-G RHG Overview


The reverse leakage current for this electrical device is 3μA @ 1V.In the course of operation, Zener (Nom) drops to zero voltage.This value reaches 900mV @ 10mA when the maximum Forward voltage (Vf) is applied.

BZT52B3V9-G RHG Features


reverse leakage current of 3μA @ 1V
3μA @ 1V is the maximum voltage (Tol)


BZT52B3V9-G RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52B3V9-G RHG applications of zener single diodes.


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