BZT52B6V2-G RHG

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Manufacturer part number:BZT52B6V2-G RHG

Manufacturer:Taiwan Semiconductor Corporation

Description:ZENER DIODE 10Ohm ±2% 3μA @ 4V -55°C~150°C TJ SOD-123

Case Package:SOT-23

Datasheet:BZT52B6V2-G RHG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	SOD-123
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±2%
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.10.00.50
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	3μA @ 4V
Voltage - Forward (Vf) (Max) @ If	900mV @ 10mA
Power - Max	410mW
Impedance-Max	10Ohm
Voltage - Zener (Nom) (Vz)	6.2V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZT52B6V2-G RHG Overview

The reverse leakage current needed to power this electric device is 3μA @ 4V.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 6.2V.For its operation, the maximum voltage - Forward (Vf) 900mV @ 10mA is supplied.