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BZT52C20-G RHG

  • BZT52C20-G RHG
  • BZT52C20-G RHG

BZT52C20-G RHG

BZT52C20-G RHG

Taiwan Semiconductor Corporation

ZENER DIODE 55Ohm ±5% 100nA @ 14V 150°C TJ 2 Terminations SOD-123

SOT-23

BZT52C20-G RHG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Surface Mount YES
Diode Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.35W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 14V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 350mW
Impedance-Max 55Ohm
Reference Voltage 20V
Voltage - Zener (Nom) (Vz) 20V
Voltage Tol-Max 5%
Working Test Current 5mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03851 $0.11553
BZT52C20-G RHG Product Details

BZT52C20-G RHG Overview


In order to supply this electrical device, a reverse leakage current of 100nA @ 14V is required.This value (Tol) represents the maximum voltage that can be supplied.Zener (Nom) voltage is reduced to 20V during operation.This device should be operated with 5mA as the working test voltage.900mV @ 10mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZT52C20-G RHG Features


reverse leakage current of 100nA @ 14V
100nA @ 14V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52C20-G RHG Applications


There are a lot of Taiwan Semiconductor Corporation
BZT52C20-G RHG applications of zener single diodes.


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