BZT55B9V1 L1G

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Manufacturer part number:BZT55B9V1 L1G

Manufacturer:Taiwan Semiconductor Corporation

Description:ZENER DIODE 10Ohm ±2% 100nA @ 6.8V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

Case Package:SOT-23

Datasheet:BZT55B9V1 L1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-213AC, MINI-MELF, SOD-80
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Tolerance	±2%
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code	8541.10.00.50
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	100nA @ 6.8V
Voltage - Forward (Vf) (Max) @ If	1V @ 10mA
Power - Max	500mW
Impedance-Max	10Ohm
Voltage - Zener (Nom) (Vz)	9.1V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

BZT55B9V1 L1G Overview

In order to supply this electrical device, a reverse leakage current of 100nA @ 6.8V is required.Zener (Nom) voltage is reduced to 9.1V during operation.1V @ 10mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.