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BZT55C4V7 L1G

  • BZT55C4V7 L1G
  • BZT55C4V7 L1G

BZT55C4V7 L1G

BZT55C4V7 L1G

Taiwan Semiconductor Corporation

ZENER DIODE 60Ohm ±5% 500nA @ 1V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55C4V7 L1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Surface Mount YES
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 1V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 60Ohm
Reference Voltage 4.7V
Voltage - Zener (Nom) (Vz) 4.7V
Voltage Tol-Max 5%
Working Test Current 5mA
Dynamic Impedance-Max 60Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZT55C4V7 L1G Product Details

BZT55C4V7 L1G Overview


An electrical device like this requires a reverse leakage current of 500nA @ 1V.A maximum voltage (Tol) can be supplied if 5% is set.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 4.7V.This device must be operated with the working test voltage set to 5mA.For operation, diode reaches 1V @ 10mA at the maximum voltage - Forward (Vf).

BZT55C4V7 L1G Features


reverse leakage current of 500nA @ 1V
500nA @ 1V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT55C4V7 L1G Applications


There are a lot of Taiwan Semiconductor Corporation
BZT55C4V7 L1G applications of zener single diodes.


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