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BZT55C51 L1G

  • BZT55C51 L1G
  • BZT55C51 L1G

BZT55C51 L1G

BZT55C51 L1G

Taiwan Semiconductor Corporation

ZENER DIODE 125Ohm ±5% 100nA @ 38V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55C51 L1G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Surface Mount YES
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 38V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 125Ohm
Reference Voltage 51V
Voltage - Zener (Nom) (Vz) 51V
Voltage Tol-Max 5%
Working Test Current 2.5mA
Dynamic Impedance-Max 125Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZT55C51 L1G Product Details

BZT55C51 L1G Overview


An electrical device such as this requires reverse leakage current of 100nA @ 38V.A voltage of 5% is considered to be the maximum that can be output (Tol).During operation, the maximum voltage - Zener (Nom) is reduced to 51V volts.Setting the working test voltage to 2.5mA is required to operate this device.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 1V @ 10mA V.

BZT55C51 L1G Features


reverse leakage current of 100nA @ 38V
100nA @ 38V is the maximum voltage (Tol)
the working test voltage to 2.5mA
minimal dynamic impedance is 2.5mA


BZT55C51 L1G Applications


There are a lot of Taiwan Semiconductor Corporation
BZT55C51 L1G applications of zener single diodes.


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