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BZT55C8V2 L1G

  • BZT55C8V2 L1G
  • BZT55C8V2 L1G

BZT55C8V2 L1G

BZT55C8V2 L1G

Taiwan Semiconductor Corporation

ZENER DIODE 7Ohm ±5% 100nA @ 6.2V -65°C~175°C TJ DO-213AC, MINI-MELF, SOD-80

SOT-23

BZT55C8V2 L1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Surface Mount YES
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Tolerance ±5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Power - Max 500mW
Impedance-Max 7Ohm
Reference Voltage 8.2V
Voltage - Zener (Nom) (Vz) 8.2V
Voltage Tol-Max 5%
Working Test Current 5mA
Dynamic Impedance-Max 7Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZT55C8V2 L1G Product Details

BZT55C8V2 L1G Overview


A reverse leakage current of 100nA @ 6.2V is required to supply this electrical device.Voltage (Tol) is limited to 5%.Zener (Nom)'s maximum voltage is reduced to zero during operation.To operate this device, set the working test voltage to 5mA.1V @ 10mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZT55C8V2 L1G Features


reverse leakage current of 100nA @ 6.2V
100nA @ 6.2V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT55C8V2 L1G Applications


There are a lot of Taiwan Semiconductor Corporation
BZT55C8V2 L1G applications of zener single diodes.


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