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BZY55B4V7 RYG

  • BZY55B4V7 RYG
  • BZY55B4V7 RYG

BZY55B4V7 RYG

BZY55B4V7 RYG

Taiwan Semiconductor Corporation

ZENER DIODE 70Ohm ±2% 500nA @ 1V -55°C~150°C TJ 2 Terminations 0805 (2012 Metric)

SOT-23

BZY55B4V7 RYG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 0805 (2012 Metric)
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Tolerance ±2%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Terminal Position DUAL
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-R2
Qualification Status Not Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.5W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 1V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 10mA
Power - Max 500mW
Impedance-Max 70Ohm
Reference Voltage 4.7V
Voltage - Zener (Nom) (Vz) 4.7V
Voltage Tol-Max 2%
Working Test Current 5mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BZY55B4V7 RYG Product Details

BZY55B4V7 RYG Overview


A reverse leakage current of 500nA @ 1V is required to supply this electrical device.Voltage (Tol) is limited to 2%.Zener (Nom)'s maximum voltage is reduced to zero during operation.To operate this device, set the working test voltage to 5mA.1.5V @ 10mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZY55B4V7 RYG Features


reverse leakage current of 500nA @ 1V
500nA @ 1V is the maximum voltage (Tol)
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZY55B4V7 RYG Applications


There are a lot of Taiwan Semiconductor Corporation
BZY55B4V7 RYG applications of zener single diodes.


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